Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F10%3A00346428" target="_blank" >RIV/67985858:_____/10:00346428 - isvavai.cz</a>
Alternative codes found
RIV/61388980:_____/10:00346428
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment
Original language description
Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 was used for synthesis of Germanium Nanowires (GeNWs). Pressure during the deposition process was maintained at 90-100 Pa and temperature fixed at 490 °C. GeNWs of several nanometers in diameter and a few microns in length were deposited on various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Si and SiO2 substrates were modified by sputtering Ge to promote GeNW growth. Influence of surface pretreatment (surfaceroughness or Ge sputtering) is discussed in respect to the previous published theory of intermetalic solution. The results conclude that another mechanism should be taken into account ? sticking of oncoming Ge based fragments, clusters etc. on the substrate surface, their nucleation and formation of Ge seeds appropriate for initiation of the GeNW growth. Samples were studied by SEM with EDX, (HR)TEM, FTIR and Raman spectroscopy.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA203%2F09%2F1088" target="_blank" >GA203/09/1088: Preparation of the nanostructured Si/Ge/C deposits</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of the Electrochemical Society
ISSN
0013-4651
e-ISSN
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Volume of the periodical
157
Issue of the periodical within the volume
10
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
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UT code for WoS article
000281306900094
EID of the result in the Scopus database
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