High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00398417" target="_blank" >RIV/68378271:_____/13:00398417 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/13:00216405 RIV/61388980:_____/13:00398417 RIV/67985858:_____/13:00398417
Result on the web
<a href="http://dx.doi.org/10.1166/jnn.2013.7200" target="_blank" >http://dx.doi.org/10.1166/jnn.2013.7200</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1166/jnn.2013.7200" target="_blank" >10.1166/jnn.2013.7200</a>
Alternative languages
Result language
angličtina
Original language name
High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition
Original language description
Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 areformed by the ?-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness Rq below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of theresulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Nanoscience and Nanotechnology
ISSN
1533-4880
e-ISSN
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Volume of the periodical
13
Issue of the periodical within the volume
6
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
4302-4310
UT code for WoS article
000320205400087
EID of the result in the Scopus database
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