Cu-Si nanoobjects prepared by CVD on Cu/Cu5Si-substrates using various precursors (SiH4, EtSiH3, BuSiH3) with added H2 or air

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F17%3A00479312" target="_blank" >RIV/67985858:_____/17:00479312 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/17:00479312

Result on the web

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2017.02.019" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2017.02.019</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2017.02.019" target="_blank" >10.1016/j.jcrysgro.2017.02.019</a>

Result language

angličtina

Original language name

Cu-Si nanoobjects prepared by CVD on Cu/Cu5Si-substrates using various precursors (SiH4, EtSiH3, BuSiH3) with added H2 or air

Original language description

The CVD method was employed to synthesize nanoobjects of Cu-Si phases at temperature of about 500 °C. Cu/Cu5Si-substrates and various Si-containing precursors (SiH4, EtSiH3, BuSiH3) with/without added H2 or air were used. Nanoobjects of various morphologies (nanoplatelets of eta'-Cu3Si, nanoribbons and nanorods of eta''-Cu3Si, and nanowires of gamma-Cu83Si17) were obtained depending on the experimental conditions, mainly type and pressure of precursor. A mixture of Si-containing precursor and H2/air promotes the growth of nanoobjects compared to using the pure Si-containing precursor. With incre asing pressure of precursors the morphology changes from 1D (nanowires) to 2D (nanoribbons, nanoplatelets). Nanoobjects grow via the non-catalytic VS mechanism.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10403 - Physical chemistry

Project

<a href="/en/project/GC15-08842J" target="_blank" >GC15-08842J: “Silicene on copper”: monoatomic silicon surface layer with silicene-like arrangement on Cu(3+x)Si prepared by chemical and mechanical exfoliation</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Volume of the periodical

465

Issue of the periodical within the volume

May

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

6

Pages from-to

6-11

UT code for WoS article

000398875000002

EID of the result in the Scopus database

2-s2.0-85014146269