The structure of Mg or Ca silicides and Ge nanoparticles on the surface of a-Si:H thin film
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F16%3A00480295" target="_blank" >RIV/67985858:_____/16:00480295 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/16:00480295
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
The structure of Mg or Ca silicides and Ge nanoparticles on the surface of a-Si:H thin film
Original language description
The aim of our work is to reveal the mechanism of different semiconductor nanoparticles (NPs) forming on the surface of the Hydrogenated Silicon (Si:H) thin films. Glass and glass covered by Indium Tin Oxide (ITO) were used as substrates for the thin Amorphous layer (a-Si:H) deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD). The self-forming of silicides NPs was expected during evaporation of Magnesium and Calcium on the heated a-Si:H surface. Germanium we deposited by Molecular Beam Epitaxy (MBE). The NPs self - forming was investigated by Scanning Electron Microscope (SEM), High Resolution Transmission Electron Microscope (HRTEM), Atomic Force Microscope (AFM) and Raman spectroscopy
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
<a href="/en/project/LM2015087" target="_blank" >LM2015087: Laboratory of Nanostructures and Nanomaterials</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů