The structure and optical properties of self-forming germanium and silicides nanoparticles on the surface of Si:H thin film

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00479226" target="_blank" >RIV/68378271:_____/16:00479226 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

The structure and optical properties of self-forming germanium and silicides nanoparticles on the surface of Si:H thin film

Original language description

The aim of our work is to reveal the mechanism of formation of different semiconductor nanoparticles (NPs) on the surface of the hydrogenated silicon (Si:H) thin layers. Various forms of the silicide NPs are investigated for thermoelectric conversion energy and the Ge NPs formation is studied for optoelectronic applications. A thin layer of Si:H was deposited on different substrates by d chemical deposition (PECVD). The self-forming silicides NPs were realized during evaporation of Magnesium and Calcium, the Ge NPs was performed by molecular beam epitaxy (MBE) at substrate temperatures from 300 to 450 ° C. The NPs self - forming was investigated by SEM, TEM, AFM and Raman spectroscopy. The increase of optical absorption needed for the photovoltaic applications has been confirmed by the photothermal deflection spectroscopy (PDS). The optical and optoelectronic properties in the infrared part of the spectrum were investigated by the photoluminescence and electroluminescence.n

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GA13-12386S" target="_blank" >GA13-12386S: Photoconductivity and dynamics of excitations in nanostructured and disordered semiconductors on ultrafast time scale</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů