P-type InP grown by LPE from melts with rare earth admixtures.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F02%3A13020080" target="_blank" >RIV/67985882:_____/02:13020080 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

P-type InP grown by LPE from melts with rare earth admixtures.

Original language description

InP single crystal layers were grown by LPE on semi-insulating InP with various rare earth elements added to the melt. The layers were characterized by temperature dependent Hall measurements and by low temperature photo-luminescence spectroscopy. P-typeInP grown with Tb and Yb admixture was studied. The dominant acceptor in the case of Tb was identified as Mn on the In site. In the case of Yb the dominant acceptor was identified as isoelectronic Yb in In site with strong electron-lattice interaction.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Science and Engineering - B. Solid State Materials for Advanced Technology

ISSN

0921-5107

e-ISSN

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Volume of the periodical

B91-92

Issue of the periodical within the volume

N/A

Country of publishing house

CH - SWITZERLAND

Number of pages

4

Pages from-to

38-42

UT code for WoS article

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EID of the result in the Scopus database

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