Influence of Yb AND Yb2O3 addition on the properties of InP layers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F08%3A00341490" target="_blank" >RIV/67985882:_____/08:00341490 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Influence of Yb AND Yb2O3 addition on the properties of InP layers

Original language description

The influence of Yb and Yb2O3 additions into the LPE growth melt on the properties of InP epitaxial layers is reported. We have concentrated on the investigation of gettering and/or doping effects. Efficient gettering was confirmed for both Yb and Yb2O3addition, the incorporation of Yb3+ into the InP lattice was confirmed only for Yb addition. Layers grown with Yb addition exhibited n -> p conductivity conversion at certain Yb concentration. Dominant acceptor, responsible for n -> p conductivity conversion was identified as the isoelectronic Yb impurity on the In site. Layers grown with Yb2O3 admixture always show n-type electrical conductivity.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Optoelectronics and Advanced Materials

ISSN

1454-4164

e-ISSN

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Volume of the periodical

10

Issue of the periodical within the volume

12

Country of publishing house

RO - ROMANIA

Number of pages

4

Pages from-to

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UT code for WoS article

000262022500024

EID of the result in the Scopus database

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