Influence of Yb and Yb2O3 on the properties of InP layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F08%3A00308798" target="_blank" >RIV/67985882:_____/08:00308798 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Influence of Yb and Yb2O3 on the properties of InP layers
Original language description
The investigation of gettering and/or doping efficiency of Yb and Yb2O3 added into the growth process of InP epitaxial layers. Layers were examined by SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The gettering was confirmed for both Yb and Yb2O3; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor responsible for n-p conductivity conversion was identified as isoelectronic Yb impurity on the In site.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
IPRM 2008 - Proceedings of the 20th Indium Phosphide and Related Materials Conference
ISBN
978-1-4244-2258-6
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Institute of Electrical and Electronic Engineers
Place of publication
Piscataway
Event location
Versailles
Event date
May 25, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000267695700100