InP Schotky junctions for zero bias detector diodes.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F03%3A13030020" target="_blank" >RIV/67985882:_____/03:13030020 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
InP Schotky junctions for zero bias detector diodes.
Original language description
InP Schottky junctions was prepared by using Cr+Au or Ag metallization and different surface pretreatment of InP to obtain good junctions suitable for application as zero bias detectors. Electrical characteristics were studied by current-voltage and capacitance voltage measurements in the temperature range of 80-320 K. Depending on the preparation conditions, the diodes exhibited a Schottky barrier height in the range of 0.38-0.49 eV with room temperature ideality factors in the range of 1.08-1.23.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/KSK1010104" target="_blank" >KSK1010104: Condensed matter physics and materials science</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Vacuum
ISSN
0042-207X
e-ISSN
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Volume of the periodical
71
Issue of the periodical within the volume
1/2
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
113-116
UT code for WoS article
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EID of the result in the Scopus database
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