Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F13%3A00395132" target="_blank" >RIV/67985882:_____/13:00395132 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/0268-1242/28/5/055009" target="_blank" >http://dx.doi.org/10.1088/0268-1242/28/5/055009</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0268-1242/28/5/055009" target="_blank" >10.1088/0268-1242/28/5/055009</a>

Result language
angličtina
Original language name
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes
Original language description
The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current-voltage and capacitance-voltage techniques. As-deposited Schottky diodes exhibit excellent current-voltage rectifying characteristics of 7.5 107 and 1.9 1011 with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
<a href="/en/project/LD12014" target="_blank" >LD12014: Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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