High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F03%3A13030099" target="_blank" >RIV/67985882:_____/03:13030099 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
Original language description
Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by Czochralski technique. The as grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperaturedependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/KSK1010104" target="_blank" >KSK1010104: Condensed matter physics and materials science</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi C
ISSN
1610-1634
e-ISSN
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Volume of the periodical
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Issue of the periodical within the volume
3
Country of publishing house
DE - GERMANY
Number of pages
5
Pages from-to
862-866
UT code for WoS article
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EID of the result in the Scopus database
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