Preparation of nanoporous GaAs substrates for epitaxial growth
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00387641" target="_blank" >RIV/67985882:_____/12:00387641 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/12:00369349
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Preparation of nanoporous GaAs substrates for epitaxial growth
Original language description
We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of theetching regime, electrolyte, and substrate
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JJ - Other materials
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP108%2F10%2F0253" target="_blank" >GAP108/10/0253: Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi C: Current Topics in Solid State Physics
ISSN
1862-6351
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
7
Country of publishing house
DE - GERMANY
Number of pages
3
Pages from-to
1531-1533
UT code for WoS article
000306479300001
EID of the result in the Scopus database
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