Epitaxial growth on porous GaAs substrates

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00396713" target="_blank" >RIV/68378271:_____/13:00396713 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/13:00396713 RIV/68407700:21340/13:00216431
Result on the web
<a href="http://dx.doi.org/10.1016/j.crci.2012.06.012" target="_blank" >http://dx.doi.org/10.1016/j.crci.2012.06.012</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.crci.2012.06.012" target="_blank" >10.1016/j.crci.2012.06.012</a>

Result language
angličtina
Original language name
Epitaxial growth on porous GaAs substrates
Original language description
We report on the electrochemical preparation of porous GaAs substrates in fluoride-iodide aqueous electrolytes for the lattice mismatched epitaxial growth from the vapor phase. The aim is to gain control over the uniformity of the pore nucleation layer and pore branching below this layer to achieve structures with a high degree of porosity and periodicity while leaving minimum damage on the substrate surface. Layers of InxGa1-x,As with varying In content are grown on GaAs substrates with different poregeometries and depths. Substantial differences in the surface morphology and photoluminescence efficiency of the layers grown on porous and conventional substrates are observed
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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