Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00374724" target="_blank" >RIV/68378271:_____/11:00374724 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/11:00374724
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures
Original language description
We investigate the concept of epitaxial growth on porous substrates Both crystalographically oriented and current line oriented pore networks in InP and GaAs were created by electrochemical dissolution. Heat treatment of InP pores at 650 ?C and GaAs pores at 700-850?C converted them into microcavities. The capability of improved structural quality homo- and hetero-epitaxially overgrown films is demonstrated on InAs and GaInAs layers with a different composition grown on porous GaAs substrates
Czech name
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Czech description
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Project
<a href="/en/project/GAP108%2F10%2F0253" target="_blank" >GAP108/10/0253: Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
NANOCON 2011, Conference Proceedings, 3 rd International Conference
ISBN
978-80-87294-27-7
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
150-154
Publisher name
TANGER Ltd., Ostrava
Place of publication
Brno
Event location
Brno
Event date
Sep 21, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000306686700021

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