EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00356059" target="_blank" >RIV/68378271:_____/10:00356059 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/10:00356059
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs
Original language description
Structural and optical properties of micro and nano-porous InP and GaAs substrates used for an epitaxial overgrowth of thin films were investigated. Both crystalographically oriented (CO) and current line oriented (CLO) pore networks were created by electrochemical dissolution. Heat treatment of InP pores at 650oC and GaAs pores at 750-850oC converted them into microcavities The capability of improved structural quality homo- and hetero-epitaxially overgrown films on the porous InP, was also demonstrated by LPE growth of InP and InAs and GaInAs on GaAs by MOVPE technology.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
CONFERENCE PROCEEDINGS NANOCON 2010
ISBN
978-80-87294-19-2
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
28-33
Publisher name
TANGER
Place of publication
Ostrava
Event location
Olomouc
Event date
Oct 12, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000286656400004