Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
Result description
Both crystallographically oriented and current line oriented pore networks in InP and GaAs are created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and of GaAs pores at 700-850 degrees C converts them into microcavities maintaining almost the same crystallographic direction. As a transition between micro/nanopores and micro cavities the lamellar structures are obtained. Mass transport is responsible for the pore conversion. The effect of 'anion' vapour pressure is provedto be crucial for the microcavity formation since it influences the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments reveal the absence of significant extended defects, both after the formation of pores andcavities. The capability of improved structural quality of homo-and hetero-epitaxially overgrown films on porous InP is demonstrated by liquid phase epitaxy growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInA
Keywords
The result's identifiers
Result code in IS VaVaI
Alternative codes found
RIV/67985882:_____/12:00387856
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
Original language description
Both crystallographically oriented and current line oriented pore networks in InP and GaAs are created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and of GaAs pores at 700-850 degrees C converts them into microcavities maintaining almost the same crystallographic direction. As a transition between micro/nanopores and micro cavities the lamellar structures are obtained. Mass transport is responsible for the pore conversion. The effect of 'anion' vapour pressure is provedto be crucial for the microcavity formation since it influences the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments reveal the absence of significant extended defects, both after the formation of pores andcavities. The capability of improved structural quality of homo-and hetero-epitaxially overgrown films on porous InP is demonstrated by liquid phase epitaxy growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInA
Czech name
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Czech description
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Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
International Journal of Nanotechnology
ISSN
1475-7435
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
8-9
Country of publishing house
GB - UNITED KINGDOM
Number of pages
14
Pages from-to
732-745
UT code for WoS article
000303800500006
EID of the result in the Scopus database
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Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2012