Preparation of nanoporous GaAs substrates for epitaxial growth

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00369349" target="_blank" >RIV/68407700:21340/12:00369349 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/12:00387641
Result on the web
<a href="https://doi.org/10.1002/pssc.201200009" target="_blank" >https://doi.org/10.1002/pssc.201200009</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssc.201200009" target="_blank" >10.1002/pssc.201200009</a>

Result language
angličtina
Original language name
Preparation of nanoporous GaAs substrates for epitaxial growth
Original language description
We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth from the liquid and vapour phase The aim is to gain control over the uniformity of the pore nucleation layer and pore branching below this layer to achieve structures with a high degree of porosity and periodicity. The etching process should be surface-friendly and leave minimum damage on the substrate surface to be ready for the subsequent epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of the etching regime, electrolyte, and substrate. Moreover, the pore depth, pore density and pore branching can be tailored to comply with the subsequent epitaxial growth.
Czech name
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Czech description
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Type
J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database
CEP classification
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OECD FORD branch
21001 - Nano-materials (production and properties)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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