Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F20%3A00538153" target="_blank" >RIV/67985882:_____/20:00538153 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1016/j.vacuum.2020.109199" target="_blank" >https://doi.org/10.1016/j.vacuum.2020.109199</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2020.109199" target="_blank" >10.1016/j.vacuum.2020.109199</a>

Result language

angličtina

Original language name

Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering

Original language description

ZnO thin films were deposited by RF-magnetron sputtering of ZnO powder target using pure argon and argon with methane as reactive gas. It is found that growth morphology and electronic properties of the films are strongly affected by adding of methane to argon during the deposition process. Adding of methane resulted in a high energy shift of near band edge ultraviolet photoluminescence band and quenching of deep level emission in the visible spectral range. The strongest effect of methane has been found for electrical resistivity that reduced by 3 orders of magnitude in comparison with films deposited in pure argon. Unexpectedly, the analysis of the chemical composition showed no carbon incorporated from methane. Therefore, modification effects were assigned to hydrogen incorporation. However, the direct comparison of resistivity of the films deposited using methane and molecular hydrogen as doping precursors has demonstrated that doping efficiency of the methane is about an order of magnitude larger than that of molecular hydrogen under similar deposition conditions. This advantage of the methane is discussed and assigned to specific surface chemistry of Zn-O-C-H system that enhances the formation of shallow donor defects during plasma assisted deposition process

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10304 - Nuclear physics

Project

<a href="/en/project/GA19-02804S" target="_blank" >GA19-02804S: Nanostructured heterojunctions for chemiresistors</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

—

Volume of the periodical

174

Issue of the periodical within the volume

April

Country of publishing house

GB - UNITED KINGDOM

Number of pages

6

Pages from-to

109199

UT code for WoS article

000517661000022

EID of the result in the Scopus database

2-s2.0-85078002307