On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F22%3A00555968" target="_blank" >RIV/67985882:_____/22:00555968 - isvavai.cz</a>

Alternative codes found

RIV/26722445:_____/22:N0000049

Result on the web

<a href="https://doi.org/10.1007/s10854-022-07814-9" target="_blank" >https://doi.org/10.1007/s10854-022-07814-9</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-022-07814-9" target="_blank" >10.1007/s10854-022-07814-9</a>

Result language

angličtina

Original language name

On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering

Original language description

A comparative study of the effects of methane and hydrogen as reactive agents on the structural, optical, and electrical properties of ZnO thin films deposited by magnetron sputtering has been performed. The research was aimed at the identification of the nature of the previously reported strong n-type doping effect of methane. To that end, the impact of carbon and hydrogen released by the plasma decomposition of methane on the properties of ZnO films was compared with the impact of molecular hydrogen intentionally added to argon. Both methane and hydrogen caused strong enhancement of n-type conductivity in ZnO films, however, the doping effect of methane was found to be about one order of magnitude larger. The main structural effect of methane was the loss of preferential orientation and a decrease in the size of ZnO crystallites. Room-temperature photoluminescence of these films exhibited a strongly reduced green-yellow emission band in the visible spectral range accompanied by the development of a specific blue emission band. The hydrogen concentration in the ZnO films deposited using methane examined by secondary ion mass spectroscopy was found to be significantly larger than that in the films deposited using pure molecular hydrogen, which is suggested to be one of the reasons for the superior n-type doping efficiency of methane in comparison with molecular hydrogen. The enhanced structural disorder caused by methane is suggested as another contribution to the doping effect of methane

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20501 - Materials engineering

Project

<a href="/en/project/GA20-24366S" target="_blank" >GA20-24366S: Study of charge transport mechanisms in graphene-semiconductor junctions</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2022

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Materials Science-Materials in Electronics

ISSN

0957-4522

e-ISSN

1573-482X

Volume of the periodical

33

Issue of the periodical within the volume

9

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

11

Pages from-to

6421-6431

UT code for WoS article

000753905600005

EID of the result in the Scopus database

2-s2.0-85124369355