ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F25%3A00618619" target="_blank" >RIV/67985882:_____/25:00618619 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1039/D5NR00321K" target="_blank" >https://doi.org/10.1039/D5NR00321K</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/d5nr00321k" target="_blank" >10.1039/d5nr00321k</a>

Result language
angličtina
Original language name
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
Original language description
Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nucleation layer is electrically conductive and optically nontransparent to prevent the absorption of generated light in the Si substrate. This study reports the molecular beam epitaxial growth of GaN nanowires on ZrN nucleation layers sputtered on sapphire and demonstrates that ZrN provides ohmic contact to dense vertical arrays of n-type GaN nanowires. The ohmic nature of the ZrN/n-type GaN nanowire contact is evidenced by the measurement of the current-voltage characteristics of individual as-grown nanowires using nanomanipulators in a scanning electron microscope. The limitations and advantages of single-nanowire measurements are discussed, and approaches to overcome these limitations are proposed. The feasibility of this concept is demonstrated by the measurement of single nanowires with a p-n junction, exhibiting highly rectifying characteristics
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering

Project
<a href="/en/project/GF23-07585K" target="_blank" >GF23-07585K: Heterostructures of ZnO/(Al,Ga)N Nanowires for Optoelectronics</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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