Study of Nitride Silicon Membrane for Pressure Sensors.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F00%3A12010062" target="_blank" >RIV/68081731:_____/00:12010062 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Study of Nitride Silicon Membrane for Pressure Sensors.
Original language description
This paper presents results of study of membrane distortion obtained by measuring membrane deflection in several cross sections by means of Talystep scanning profiler and by a new designed optical diffractive method. Mentioned methods were applied for analyses of diaphragms fabricated using LPCVD Si 3 N 4 layers with 150 nm thick layer deposited on silicon substrate with crystallographic orientation (100). As a result there are space models of distortion of the whole membrane surface caused by known pressure acting to the membrane. Those models are exploited to optimize design of pressure sensor and modeling and simutation of its properties.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F00%2F0938" target="_blank" >GA102/00/0938: Pressure analyser</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2000
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings - Electronic Devices and Systems Y2K - Intensive Training Programme in Electronic System Design - Workshop.
ISBN
80-214-1780-3
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
310-315
Publisher name
Technical University Brno
Place of publication
Brno
Event location
Brno [CZ]
Event date
Sep 4, 2000
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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