Means of Pressure Analysis using Nitride Silicon Diaphragm.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F01%3A12020164" target="_blank" >RIV/68081731:_____/01:12020164 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Means of Pressure Analysis using Nitride Silicon Diaphragm.

Original language description

This paper presents results obtained by measuring nitride diaphragm deflection in several cross sections by means of Talystep scanning profiler and by a new designed optical diffractive method. Mentioned methods were applied for analyses of diaphragms fabricated using LPCVD Si.sub.3./sub.N.sub.4./sub. layers with 150 nm thick layer deposited on silicon substrate with crystallographic orientation (100), As a result there are space models of distortion of the whole diaphragm surface caused by known pressure acting to the diaphragm. Those models are exploited to optimize design of pressure sensor and modelling and simulation of its properties.

Czech name

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Czech description

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Type

C - Chapter in a specialist book

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2001

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Book/collection name

Advances in Systems Science: Measurement, Circuits and Control.

ISBN

960-8052-39-4

Number of pages of the result

4

Pages from-to

70-73

Number of pages of the book

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Publisher name

WSES Press

Place of publication

Piraeus

UT code for WoS chapter

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