SEM visualization of doping in semiconductors.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F02%3A12020102" target="_blank" >RIV/68081731:_____/02:12020102 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
SEM visualization of doping in semiconductors.
Original language description
Any image contrast, visualizing the doped domains in semiconductor structures, is excluded within the class of conventional materials contrasts mediated by backscattered electrons (BSE) because of the relative dopant concentration not exceeding 10.sup.-5./sup. or 10.sup.-4./sup.. The doping canbe observed in the secondary electron (SE) signal with a contrast, mostlynot exceeding the range of units of percent. The contrast origin was seenin differences in the ionization energy between p and n type material.
Czech name
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Czech description
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Project
<a href="/en/project/IAA1065901" target="_blank" >IAA1065901: Wave-optical contrasts in the scanning electron microscope</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of 15th international congress on electron microscopy.
ISBN
0-620-29294-6
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
39-40
Publisher name
Microscopy society of Southern Africa
Place of publication
Durban
Event location
Durban [ZA]
Event date
Sep 1, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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