SEM acquired electronic contrast of doped areas in semiconductors and its interpretation.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F02%3A12020095" target="_blank" >RIV/68081731:_____/02:12020095 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
SEM acquired electronic contrast of doped areas in semiconductors and its interpretation.
Original language description
New experimental data are reviewed that throw more light on explanation of the electronic contrast, mediated by secondary electrons in the SEM and visualizing the doped areas in semiconductors. Observation of p.sup.+./sup. doped patterns on the n-type Si(111) was made in cathode lens equipped very low energy SEM both under UHV and standard vacuum conditions. Further, the same structure was examined in the Auger electron spectrometer with a scanned primary beam. Data were obtained for the as-inserted specimen aswell as for that in-situ cleaned by a ion beam. When interpreting the observations, the structure was found not to behave as a clean crystal with the local differences in the inner potential compensated via above-surface patch fields but, on contrary, underlined is the role of subsurface fields, generated by semiconductor-contaminantion or semiconductor-layer contacts.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/IAA1065901" target="_blank" >IAA1065901: Wave-optical contrasts in the scanning electron microscope</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of seminar on nanotechnology for fabrication of hybrid materials.
ISBN
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ISSN
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e-ISSN
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Number of pages
4
Pages from-to
9-12
Publisher name
JPJSMA
Place of publication
Toyama
Event location
Toyama [JP]
Event date
Nov 6, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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