Profiling of N-type dopants in silicon structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F09%3A00335261" target="_blank" >RIV/68081731:_____/09:00335261 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Profiling of N-type dopants in silicon structures
Original language description
Among the dopant profiling techniques the scanning electron microscopy (SEM) reached position of a well established method which offers a high spatial resolution and good sensitivity to dopant concentration. Differently doped areas exhibit a contrast depending on the dopant level and surface conditions. Photoemission electron microscopy (PEEM) is a surface-sensitive alternative providing a high sensitivity to the dopant density. Both methods have already been successfully applied in imaging and characterization of the doped silicon structures.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy
ISBN
978-3-85125-062-6
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
Verlag der Technischen Universität
Place of publication
Graz
Event location
Graz
Event date
Aug 30, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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