Secondary electron contrast in doped semiconductor with presence of a surface ad-layer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F09%3A00335263" target="_blank" >RIV/68081731:_____/09:00335263 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Secondary electron contrast in doped semiconductor with presence of a surface ad-layer
Original language description
The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy
ISBN
978-3-85125-062-6
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
Verlag der Technischen Universität
Place of publication
Graz
Event location
Graz
Event date
Aug 30, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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