Imaging of dopants under presence of surface ad-layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F10%3A00350664" target="_blank" >RIV/68081731:_____/10:00350664 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Imaging of dopants under presence of surface ad-layers
Original language description
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast between differently doped areas is observable in the secondary electron emission. Quantitative relation exists between the image contrast and the dopant concentration. However, further examination has shown the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of ad-layers on the semiconductor surface.
Czech name
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Czech description
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Project
<a href="/en/project/GP102%2F09%2FP543" target="_blank" >GP102/09/P543: Examination of contrast in doped semiconductors with scanning low energy microscope with ultimate parameters</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation
ISBN
978-80-254-6842-5
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
Institute of Scientific Instruments AS CR, v.v.i
Place of publication
Brno
Event location
Skalský dvůr
Event date
May 31, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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