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Profiling N-Type Dopants in Silicon

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F10%3A00340745" target="_blank" >RIV/68081731:_____/10:00340745 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216224:14310/10:00043560

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Profiling N-Type Dopants in Silicon

  • Original language description

    Variously doped n-type structures (dopant concentration between 1.5x10e16 cm-3 and 1.5x10e19 cm-3) on a lightly doped p-type silicon substrate (doped to 1.9x10e15 cm-3) have been examined by a photoemission electron microscope equipped with a high-pass energy filter and by an ultra-high vacuum scanning low energy electron microscope. High contrast have been observed between the n-type areas and the p-type substrate and its monotone dependency on the doping level of structures has been manifested. The relation between the energy spectra of photoelectrons and the doping level has been studied, too. The scanning electron microscope images obtained with the landing energy of the primary beam in the low keV range exhibit contrasts similar to those appearingin the full threshold photoemission micrographs.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Transactions

  • ISSN

    1345-9678

  • e-ISSN

  • Volume of the periodical

    51

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    JP - JAPAN

  • Number of pages

    6

  • Pages from-to

  • UT code for WoS article

  • EID of the result in the Scopus database