Profiling N-Type Dopants in Silicon
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F10%3A00340745" target="_blank" >RIV/68081731:_____/10:00340745 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14310/10:00043560
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Profiling N-Type Dopants in Silicon
Original language description
Variously doped n-type structures (dopant concentration between 1.5x10e16 cm-3 and 1.5x10e19 cm-3) on a lightly doped p-type silicon substrate (doped to 1.9x10e15 cm-3) have been examined by a photoemission electron microscope equipped with a high-pass energy filter and by an ultra-high vacuum scanning low energy electron microscope. High contrast have been observed between the n-type areas and the p-type substrate and its monotone dependency on the doping level of structures has been manifested. The relation between the energy spectra of photoelectrons and the doping level has been studied, too. The scanning electron microscope images obtained with the landing energy of the primary beam in the low keV range exhibit contrasts similar to those appearingin the full threshold photoemission micrographs.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Materials Transactions
ISSN
1345-9678
e-ISSN
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Volume of the periodical
51
Issue of the periodical within the volume
2
Country of publishing house
JP - JAPAN
Number of pages
6
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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