Mapping of dopants in silicon by injection of electrons
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F11%3A00367280" target="_blank" >RIV/68081731:_____/11:00367280 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Mapping of dopants in silicon by injection of electrons
Original language description
Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability hasbeen verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
MC 2011 - Microscopy Conference Kiel
ISBN
978-3-00-033910-3
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
"IM7.P198:1"-"2"
Publisher name
DGE
Place of publication
Kiel
Event location
Kiel
Event date
Aug 28, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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