Mapping of dopants in silicon by injection of electrons

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F11%3A00371449" target="_blank" >RIV/68081731:_____/11:00371449 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Mapping of dopants in silicon by injection of electrons

Original language description

Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability hasbeen verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů