Mapping of dopants by electron injection
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F10%3A00350658" target="_blank" >RIV/68081731:_____/10:00350658 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Mapping of dopants by electron injection
Original language description
Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation
ISBN
978-80-254-6842-5
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
Institute of Scientific Instruments AS CR, v.v.i
Place of publication
Brno
Event location
Skalský dvůr
Event date
May 31, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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