Mapping of dopants in silicon by electron injection
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F12%3A00386449" target="_blank" >RIV/68081731:_____/12:00386449 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Mapping of dopants in silicon by electron injection
Original language description
Dopants in sillicon based structures locally modifty the secondary electron emission, revealing in this way their distribution over the sample. For probing the doped structures usually the elctron beam is used at energies around 1keV. However, the very low landing energy range has proven itself an effecient tool for mapping dopant in semiconductors.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Physic and Nanoscale. (Proceedings of the 10th IUVSTA International Summer School )
ISBN
978-80-260-0619-0
ISSN
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e-ISSN
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Number of pages
1
Pages from-to
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Publisher name
IOP AS CR
Place of publication
Praha
Event location
Devět skal
Event date
May 30, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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