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Study of multi-layered graphene by ultra-low energy SEM/STEM

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F16%3A00459573" target="_blank" >RIV/68081731:_____/16:00459573 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.diamond.2015.12.012" target="_blank" >http://dx.doi.org/10.1016/j.diamond.2015.12.012</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.diamond.2015.12.012" target="_blank" >10.1016/j.diamond.2015.12.012</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Study of multi-layered graphene by ultra-low energy SEM/STEM

  • Original language description

    Scanning electron microscopy with very slow electrons offers a novel tool enabling one to image the graphene samples at nanometer or even sub-nanometer lateral resolution in transmitted as well as reflected electrons and to count reliably the atomic layers in both imaging modes. The study was performed on graphene prepared by chemical vapor deposition on thin copper foil. Observation by slow electrons has also confirmed the underlayer mechanism of nucleation and growth bellow already existing graphene layers on copper. Moreover, electrons with impacted energy below 100 eV can be used for "cleaning" of a material. It leads to elimination of the contamination process during the measurement, which enables to observe the predicted oscillations in reflection mode and to measure the transmissivity of various stacks of layers in transmission mode down to units of eV.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Diamond and Related Materials

  • ISSN

    0925-9635

  • e-ISSN

  • Volume of the periodical

    63

  • Issue of the periodical within the volume

    March 2016

  • Country of publishing house

    CH - SWITZERLAND

  • Number of pages

    7

  • Pages from-to

    136-142

  • UT code for WoS article

    000371942700025

  • EID of the result in the Scopus database

    2-s2.0-84959251388