Combined e-beam lithography using different energies
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F17%3A00477782" target="_blank" >RIV/68081731:_____/17:00477782 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.mee.2017.01.035" target="_blank" >http://dx.doi.org/10.1016/j.mee.2017.01.035</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mee.2017.01.035" target="_blank" >10.1016/j.mee.2017.01.035</a>
Alternative languages
Result language
angličtina
Original language name
Combined e-beam lithography using different energies
Original language description
This paper considers the possibilities of combined exposure of e-beam systems working with a significant difference of primary electron energies (Gaussian beam system Raith EBPG5000 + ES100 keV, variable shape beam system Tesla BS600 15 keV) on one substrate with one resist layer for the purposes of grayscale lithography. Variation of primary electron energies and differences in e-beam systems make it possible to use each system for various parts of a large-scale pattern containing various micro-optical elements. The mix and match process can be carried out in two possible ways. The first method consists of two successive exposures followed by resist development. This method has the advantage of using only one developer, though it requires better control of proximity effect corrections. The second method is to perform exposures and resist development independently by finding a suitable second developer that does not influence the result of the first exposure. This method allows the tuning of the resulting structures from each system independently by adjusting the development process (temperature, time). We tested several parameters of both system exposures (data preparation, resolution, speed, type of patterns, developers) to show the advantages of using this combined technique for grayscale lithography. These methods make the preparation of highly complex large-scale micro-optical elements easier in comparison with the use of just one system.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Microelectronic Engineering
ISSN
0167-9317
e-ISSN
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Volume of the periodical
177
Issue of the periodical within the volume
JUN
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
30-34
UT code for WoS article
000403997500008
EID of the result in the Scopus database
2-s2.0-85012294485