Broken-gap heterojunction in the p-GaSb- n-InAs 1-xSb x(0.le.x.le.0.18) system.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F01%3A02010279" target="_blank" >RIV/68378271:_____/01:02010279 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Broken-gap heterojunction in the p-GaSb- n-InAs 1-xSb x(0.le.x.le.0.18) system.

Original language description

Epitaxial InAs 1-xSb x layers with the Sb content 0.le.x.le.0.18 were grown by metalorganic vapor phase epitaxy (MOVPE) on p-GaSb and n-InAs substrates. The photoluminescence (PL) spectra of the heterostructures were measured at T=77 K. The experiment PLdata were used to study variation of the bandgap width as a function of the InAsSb solid solution composition.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2001

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Technical Physics Letters

ISSN

1063-7850

e-ISSN

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Volume of the periodical

27

Issue of the periodical within the volume

11

Country of publishing house

RU - RUSSIAN FEDERATION

Number of pages

3

Pages from-to

966-968

UT code for WoS article

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EID of the result in the Scopus database

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