MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F01%3A02010010" target="_blank" >RIV/68378271:_____/01:02010010 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers.
Original language description
The growth by solid source molecular beam epitaxy of type-II InAsSb/InAs multi-quantum well laser diodes on InAs has been studied. Mesa-stripe laser diodes processed from the epitaxied structures operated at 3.5 microm in pulsed regime up to 220 K, witha threshold current density of 130A/cm2 at 90 K and a peak optical power efficiency of 50mW/A/facet.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
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Volume of the periodical
223
Issue of the periodical within the volume
N/A
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
341-348
UT code for WoS article
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EID of the result in the Scopus database
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