Silicon-based light-emitting materials:implanted SiO 2 films and wide bandgap a-Si:H.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F01%3A02010330" target="_blank" >RIV/68378271:_____/01:02010330 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Silicon-based light-emitting materials:implanted SiO 2 films and wide bandgap a-Si:H.
Original language description
We review critically recent results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si + implanted SiO 2 films from point of view of light-emission applications. Wide bandgap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibitsroom temperature photoluminescence in the visible region.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Optical Organic and Inorganic Materials.
ISBN
0-8197-4120-1
ISSN
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e-ISSN
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Number of pages
10
Pages from-to
66-75
Publisher name
SPIE
Place of publication
Bellingham
Event location
Vilnius [LT]
Event date
Apr 16, 2000
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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