Electroluminescence in a semimetal channel at a single broken-gap heterointerface of type II.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A02030347" target="_blank" >RIV/68378271:_____/03:02030347 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Electroluminescence in a semimetal channel at a single broken-gap heterointerface of type II.
Original language description
The radiative recombination at the broken-gap p-GaInAsSb/p-InAs type-II interface was investigated in the temperature range of 4-100K.Two electroluminescence bands at 0.37 eV and 0.40 eV were observed. The first EL maximum was ascribed to recombination of electrons from semimetal channel at the interface with holes on deep acceptor level at the interface. The second EL maximum is connecected with the recombination in bulk InAs.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductors structures, interfaces and surfaces
ISSN
1063-7826
e-ISSN
—
Volume of the periodical
37
Issue of the periodical within the volume
10
Country of publishing house
RU - RUSSIAN FEDERATION
Number of pages
5
Pages from-to
1185-1189
UT code for WoS article
—
EID of the result in the Scopus database
—