Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00371383" target="_blank" >RIV/68378271:_____/10:00371383 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.phpro.2010.01.161" target="_blank" >http://dx.doi.org/10.1016/j.phpro.2010.01.161</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.phpro.2010.01.161" target="_blank" >10.1016/j.phpro.2010.01.161</a>

Result language
angličtina
Original language name
Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
Original language description
Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3-5 ?m at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on InAs surface. I-V characteristics behavior was discussed using the tunneling-assisted current transport mechanism through surface states. Redistribution between the interband (h?1=0.36 eV) and interface (h?2=0.31 eV) emission bands in electroluminescent spectraat reverse bias was found in dependence on Fermi level position pinning by surface states at the type II broken-gap heterointerface.
Czech name
—
Czech description
—

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—

Project
<a href="/en/project/IAA100100719" target="_blank" >IAA100100719: Controlled quantum dot MOVPE growth</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)