Annealing of Bi 2 Te 3 thin films prepared by pulsed laser deposition.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A13030140" target="_blank" >RIV/68378271:_____/03:13030140 - isvavai.cz</a>

Alternative codes found

RIV/67985882:_____/03:13030140

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Annealing of Bi 2 Te 3 thin films prepared by pulsed laser deposition.

Original language description

Bi 2 Te 3 thin films were prepared by laser ablation /PLD/ at room temperature and then annealed in argon atmosphere. Anneling is a widely used method of film properties /primarily crystallinity/ improvement. The influence of annealing on transport properties was studied.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

International Conference NANO'03. Proceedings.

ISBN

80-214-2486-9

ISSN

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e-ISSN

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Number of pages

5

Pages from-to

104-108

Publisher name

Vysoké učení technické, Fakulta strojního inženýrství

Place of publication

Brno

Event location

Brno [CZ]

Event date

Oct 21, 2003

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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