Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A49033147" target="_blank" >RIV/68378271:_____/03:49033147 - isvavai.cz</a>

Alternative codes found

RIV/61389005:_____/03:49033147 RIV/49777513:23520/03:00000007

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.

Original language description

Si-C-N films were deposited on p-type Si(I 0 0) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were controlled by the silicon fraction (5-80%) in the erosion target area for a 50% N-2+50% Ar gas mixture and by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the erosion target area. The total pressure and the discharge current on the magnetron target were held constant at p = 0.5 Pa and I-m = I A, the substrate temperature was adjusted at T-s = 600 degreesC by an ohmic heater and the r.f. induced negative substrate bias voltage, U-b was -500 V The films, typically 1.0-1.5 mum thick, werefound to be amorphous with a very smooth surface (R(a)less than or equal to0.8 nm) and good adhesion to substrates. It was shown that not only the composition of the C-Si target but also the nitrogen-argon gas mixture composition makes it

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BG - Nuclear, atomic and molecular physics, accelerators

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

DIAMOND AND RELATED MATERIALS

ISSN

0925-9635

e-ISSN

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Volume of the periodical

12

Issue of the periodical within the volume

8

Country of publishing house

CH - SWITZERLAND

Number of pages

7

Pages from-to

1287-1294

UT code for WoS article

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EID of the result in the Scopus database

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