Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F02%3A00072775" target="_blank" >RIV/49777513:23520/02:00072775 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/02:02030553 RIV/61389005:_____/02:02030553 RIV/49777513:23520/02:00000528 RIV/49777513:23520/02:00000529
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films
Original language description
Si-C-N films were deposited on p-type Si (100) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were primarily controlled by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the magnetron erosion track area. The total pressure and the discharge current on the magnetron target were held constant at P = 0.5 Pa, Im = 1 A, the substrate temperature was adjusted at Ts = 600 C by an ohmic heater and the rf-induced negative substrate bias voltage, Ub was -500 V.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Project
<a href="/en/project/ME%20203" target="_blank" >ME 203: New plasma systems for preparation of thin films</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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