Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F04%3A00100474" target="_blank" >RIV/68378271:_____/04:00100474 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Photo-Hall effect measurements in P, N and B-doped diamond at low temperatures
Original language description
Resistivity and Hall effect measurements are applied to understand the electronic properties of homoepitaxially grown n- and p-type CVD diamond in the wide temperature range 10-900K. To overcome the high dark resistivity at low temperature, carrier concentration is enhanced by photo-excitation
Czech name
Měření foto-Hallova jevu v P, N a B dopovaném diamantu při nízkých teplotách
Czech description
Měření odporu a Hallova jevu byli použity ke studio elektronických vlastností homoepitaxně rostlých CVD diamantových vrstev typu n a p
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Diamond and Related Materials
ISSN
0925-9635
e-ISSN
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Volume of the periodical
13
Issue of the periodical within the volume
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Country of publishing house
CH - SWITZERLAND
Number of pages
5
Pages from-to
713-717
UT code for WoS article
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EID of the result in the Scopus database
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