Si-substitutional defects on the .alfa.-Sn/Si(111)-(.sqrt. 3 x. sqrt. 3) surface
Result description
We use a first-principle DFT local-orbital method and analyze Si-defects on a large Sn/Si(111) surface unit-cell, corresponding to a defect concentration as low as 3.7%
Keywords
The result's identifiers
Result code in IS VaVaI
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Si-substitutional defects on the .alfa.-Sn/Si(111)-(.sqrt. 3 x. sqrt. 3) surface
Original language description
We use a first-principle DFT local-orbital method and analyze Si-defects on a large Sn/Si(111) surface unit-cell, corresponding to a defect concentration as low as 3.7%
Czech name
Si-substituční defekt na Sn/Si(111)-(.sqrt. 3 x .sqrt. 3) povrchu
Czech description
Použili jsme prvoprincipielní DFT metodu lokálních orbitálů a analyzovali jsme Si-poruchy v rámci velkých Sn/Si(111) povrchových základních buněk, odpovídající nízké koncentraci 3.7%
Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
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Volume of the periodical
234
Issue of the periodical within the volume
-
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
286-291
UT code for WoS article
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EID of the result in the Scopus database
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Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2004