Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F24%3APU155960" target="_blank" >RIV/00216305:26210/24:PU155960 - isvavai.cz</a>

Result on the web

<a href="https://www.mdpi.com/2079-9292/13/15/2945" target="_blank" >https://www.mdpi.com/2079-9292/13/15/2945</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/electronics13152945" target="_blank" >10.3390/electronics13152945</a>

Result language

angličtina

Original language name

Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers

Original language description

The monolithic integration of gallium phosphide (GaP), with its green band gap, high refractive index, large optical non-linearity, and broad transmission range on silicon (Si) substrates, is crucial for Si-based optoelectronics and integrated photonics. However, material mismatches, including thermal expansion mismatch and polar/non-polar interfaces, cause defects such as stacking faults, microtwins, and anti-phase domains in GaP, adversely affecting its electronic properties. Our paper presents a structural and defect analysis using scanning transmission electron microscopy, high-resolution transmission electron microscopy, and scanning nanobeam electron diffraction of epitaxial GaP islands grown on Si nanotips embedded in SiO2. The Si nanotips were fabricated on 200 mm n-type Si (001) wafers using a CMOS-compatible pilot line, and GaP islands were grown selectively on the tips via gas-source molecular-beam epitaxy. Two sets of samples were investigated: GaP islands nucleated on open Si nanotips and islands nucleated within self-organized nanocavities on top of the nanotips. Our results reveal that in both cases, the GaP islands align with the Si lattice without dislocations due to lattice mismatch. Defects in GaP islands are limited to microtwins and stacking faults. When GaP nucleates in the nanocavities, most defects are trapped, resulting in defect-free GaP islands. Our findings demonstrate an effective approach to mitigate defects in epitaxial GaP on Si nanotip wafers fabricated by CMOS-compatible processes.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

—

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Electronics (MDPI)

ISSN

2079-9292

e-ISSN

—

Volume of the periodical

13

Issue of the periodical within the volume

15

Country of publishing house

CH - SWITZERLAND

Number of pages

11

Pages from-to

„“-„“

UT code for WoS article

001286980800001

EID of the result in the Scopus database

2-s2.0-85200884358