Low pressure plasma-jet systems and their application for deposition of ceramic thin films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F07%3A00097890" target="_blank" >RIV/68378271:_____/07:00097890 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Low pressure plasma-jet systems and their application for deposition of ceramic thin films
Original language description
We applied the single and the double hollow cathode plasma jet systems for deposition of BaxSr1-xTiO3 (BSTO) thin films on Si and on multi-layer Si/SiO2/TiO2/Pt substrates. Two ceramic inserts in a single nozzle or two separate nozzles made of BaTiO3 andSrTiO3 ceramics were reactively sputtered in the RF modulated plasma jet. Plasma parameters were determined by time-resolved measurements. Electron density and electron effective temperature at the substrate position were determined by Langmuir probe technique, temperature of neutral particles and ratio of sputtered atoms were estimated by optical emission spectroscopy. Measured electron concentration reached value 2x1016 m-3 during the active part of the duty cycle and resulting effective electron temperature was approximately 5 eV. High correlation between ratio of spectral intensity of Ba and Sr lines and ratio of Ba and Sr atoms in BSTO thin film was observed. XRD diffraction confirmed presence of BSTO and STO perovskite phase.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Optoelectronics and Advanced Materials
ISSN
1454-4164
e-ISSN
—
Volume of the periodical
9
Issue of the periodical within the volume
4
Country of publishing house
RO - ROMANIA
Number of pages
6
Pages from-to
875-880
UT code for WoS article
000245834800017
EID of the result in the Scopus database
—