Large area deposition of Pb(Zr,Ti)O3 thin films for piezoelectric MEMS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F08%3A00306540" target="_blank" >RIV/68378271:_____/08:00306540 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Large area deposition of Pb(Zr,Ti)O3 thin films for piezoelectric MEMS
Original language description
Pb(Zr,Ti)O3 (PZT) thin films deposited on insulating ZrO2 buffered silicon wafer are intended to be employed for in-plane polarized piezoelectric MEMS devices. Multi-target reactive sputtering system for large area deposition of in-situ crystallized PZTthin films and the ZrO2 buffer layer has been employed.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electroceramics
ISSN
1385-3449
e-ISSN
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Volume of the periodical
20
Issue of the periodical within the volume
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Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
17-20
UT code for WoS article
000252768700004
EID of the result in the Scopus database
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