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Large area deposition of Pb(Zr,Ti)O3 thin films for piezoelectric MEMS

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F08%3A00306540" target="_blank" >RIV/68378271:_____/08:00306540 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Large area deposition of Pb(Zr,Ti)O3 thin films for piezoelectric MEMS

  • Original language description

    Pb(Zr,Ti)O3 (PZT) thin films deposited on insulating ZrO2 buffered silicon wafer are intended to be employed for in-plane polarized piezoelectric MEMS devices. Multi-target reactive sputtering system for large area deposition of in-situ crystallized PZTthin films and the ZrO2 buffer layer has been employed.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2008

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Electroceramics

  • ISSN

    1385-3449

  • e-ISSN

  • Volume of the periodical

    20

  • Issue of the periodical within the volume

    -

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    4

  • Pages from-to

    17-20

  • UT code for WoS article

    000252768700004

  • EID of the result in the Scopus database