Surface biasing effectiveness in r-HiPIMS deposition of non-conductive ZrO2 films on substrates with different capacitances

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F23%3A43970254" target="_blank" >RIV/49777513:23520/23:43970254 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Surface biasing effectiveness in r-HiPIMS deposition of non-conductive ZrO2 films on substrates with different capacitances

Original language description

In this study, we investigate the effect of surface biasing during high-power impulse magnetron sputter deposition of non-conductive zirconium dioxide films on substrates with different capacitances. We employ reactive high-power impulse magnetron sputtering to deposit ZrO2 films using a circular Zr target in a pure oxygen atmosphere. The deposition experiments are conducted on two substrates: high-capacitance (thin thermally grown SiO2 on Si) and low-capacitance (soda-lime glass). By varying the time shift between the target voltage pulse and the negative substrate bias voltage pulse, we analyse the impact on the preferred crystal orientation of the deposited ZrO2 films and the deposition rate. We measure the current and voltage waveforms during the deposition process and utilize a surface charging model to understand the charging behaviour of the growing film. Additionally, time- and energy-resolved ion mass spectra are measured to gain insights into the ion behaviour during film growth. Our results demonstrate that energetic ion bombardment and appropriate timing of substrate biasing can influence the crystal orientation of ZrO2 films, favouring specific orientations over others. We also explain the different behaviour observed on low- and high-capacitance substrates.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

20506 - Coating and films

Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů