Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F08%3A00308047" target="_blank" >RIV/68378271:_____/08:00308047 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
Original language description
Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski?Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy(RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 ?m according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation betweenRAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown.
Czech name
Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami
Czech description
Struktury s jednou a dvěma vrstvami InAs/GaAs kvantových teček a vrstvami redukujícími pnutí byly připraveny pomocí MOVPE. Růst těchto struktur, vykazujících velmi intenzivní fotoluminiscenci za pokojové teploty emitované na vlnových délkách od 1.25 do 1.55 ?m byl monitorován pomocí RAS.

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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