Capping of InAs/GaAs quantum dots for GaAs based lasers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00377124" target="_blank" >RIV/68378271:_____/12:00377124 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.5772/2645" target="_blank" >http://dx.doi.org/10.5772/2645</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.5772/2645" target="_blank" >10.5772/2645</a>

Result language
angličtina
Original language name
Capping of InAs/GaAs quantum dots for GaAs based lasers
Original language description
Growth conditions of InAs/GaAs QD layers determine such parameters as density, homogeneity and original size of QDs. The aim of the chapter is to elucidate the processes during QD capping by reflectance anisotropy spectroscopy (RAS) in situ measurementsand to discuss the influence of the capping layer composition and its growth parameters (like thickness, growth temperature and growth rate) on the structural and optical properties of InAs/GaAs quantum dots. Three most common types of capping layers arestudied: simple GaAs capping layer, InGaAs or GaAsSb strain reducing layers (SRL). Advantages and disadvantages of both types of SRLs will be discussed. Different types of In flushing method during the growth of capping layers and their importance are discussed at the end of the chapter.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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